阻碍位错运动的障碍不同,强化机理不同。 第一种是溶质原子,引起 ;第二种是晶界原子,引起 A. ; 第三种是第二相粒子,引起 D ;第四种是位错本身,引起 B. 。 A.细晶强化 B.位错强化 C. 固溶强化 D. 沉淀强化(弥散强化)
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